MIT researchers have succeeded in increasing the amount of data processed by a processor that was previously limited.
Since the silicon transistors do not evolve fast enough, the increase in processor power has decreased in recent years.
Microsystems technology laboratories of the MIT have used nanotechnology to reverse the state of things.
Instead of using silicon, they had the idea of involving carbon nanotubes, which are sheets of graphene designed as cylinders. But also memory cells with random access memory (RRAM), a non-volatile memory. They were able to integrate 1 million cell of RRAM and 2 million transistors of carbon nanotubes, creating the most complex nanoelectronic system ever designed.
The current silicon transistors are built in 2-D at temperatures that can be extreme, up to 1000 ° C. If an additional layer is added in the chips, the high temperature could destroy the circuits.
While carbon nanotube and RRAM memory can be built at only 200 ° C; This means that they can be added in the form of layers, without damaging the chips.
According to the researchers, energy efficiency will be better, and the RRAM will be denser and faster, but also less energy intensive, compared to DRAM.
We can finally talk about 3-D processors in the future!
Source : MIT.